Simple measurement of band gap using XPS.
It is possible to measure simply using XPS! Please inquire about semiconductors other than oxide-based ones.
At AITES, we conduct "simple measurement of band gaps using XPS." It is possible to simply measure the band gaps of materials or thin films with relatively wide band gaps among semiconductors and insulators using XPS. When measuring the band gap of β-Ga2O3 using the O1s peak, the band gap of this β-Ga2O3 was measured to be approximately 4.9 eV, based on the difference between the peak position of O1s and the energy loss edge due to the band gap. 【Features】 ■ Can be easily measured using XPS ■ Simple measurement of thin films with wide band gaps, such as SiON, is also possible ■ Supports semiconductors other than oxide-based materials *For more details, please refer to the PDF document or feel free to contact us.
- Company：アイテス
- Price：Other
